Singletron laboratory

Laboratory Name: ION BEAM ANALYSIS
Scientific Responsible: Prof. Salvatore Mirabella
Location: Ed. 6, floor -1

The laboratory is aimed at surface analysis (up to 1 micrometer) of solid materials, by means of ion beam methods (Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, Particle Induced X-ray Emission, Nuclear Reaction Analysis). The interaction of light ion (H+ o He+, He++) beam at medium energy (0.5-3.5 MeV) with solid materials brings to several phenomena, such as ion backscattering, elastic recoil, X-ray emission, nuclear reactions. Proper detection in a scattering chamber allows to determine structural properties of analyzed samples.
The analysis of materials gives information on composition and crystal structure. By means of RBS, NRA ed ERDA one can quantify elemental composition, also with profilometry. In addition, ERDA allows to quantify H content in surface layers. Elemental dose in nanostructures onto flat materials can be extracted. By channeling analysis the presence of crystal defects can be detected.
The laboratory hosts experiments in the field of Experimental Matter Physics, Experimental Physics of fundamental interactions, Applied Physics.

Equipment description

3.5 MV HVEE Singletron
Since 2002 the laboratory has a 3.5 MV HVEE Singletron accelerator (Cockroft-Walton model, cascade accelerator), with high-stability and brightness.
SPECIFICATIONS:
  • Terminal voltage range: 0.2-3.5 MV
  • Terminal voltage ripple: 200 Vpp
  • Terminal voltage stability (at 2250 kV): ±150 V
  • Beam brightness: 10 Amp (rad m)-2 eV-1
  • X-ray radiation level (at 1 m from the tank): < 2 µSv/h
  • H+ beam current (after the magnet): 100 µA
  • He+ beam current (after the magnet): 20 µA
  • Beam size: 3×3 mm2
  • He++ beam current (Ion Energy up to 7 MeV): 0.1 µA
Scattering Chamber
The laboratory of Ion Beam Analysis is equipped with an High Voltage Engineering Europe 3.5 MV Singletron accelerator and a beam line for Backscattering Spectrometry.
The scattering chamber has a three axis goniometer, with 0.01 deg accuracy, for channeling analysis and standard ion implanted Si detectors by ORTEC.
The electronic acquisition system is an ORTEC high-speed acquisition system with two independent MCBs.