Silicon Carbide (SiC) presents a high breakdown field (2-4 MV/cm) and a high-energy band gap (2.3–3.2 eV), largely higher than silicon and for these reasons is the ideal material for high power devices.
Eventi
11/11/2019
Seminario del Dr Shima Asnafi (IPM, Tehran, Iran)
07/11/2019
“You are educated. Your certification is in your degree. You may think of it as the ticket to the good life. Let me ask you to think of an alternative. Think of it as your ticket to change the world.” —Tom Brokaw
07/11/2019
Una giornata dedicata al radon ed alla radioattività ambientale celebra l'anniversario della nascita di Marie Curie
06/11/2019
Become a scientist for a day! Discover the world of cosmic rays like an astroparticle physicist!
04/11/2019
Seminario della Prof.ssa Joanna Molenda-Żakowicz (Wroclaw, Poland)
31/10/2019
Seminario Prof.ssa Valerie Marchi (Department of Physics and Chemistry, University of Rennes I, France)
30/10/2019
Buon compleanno, Prof. Di Toro!
