Ferroelectrics at the nanoscale on silicon: topological polar textures

Relatore: 
Prof. Dr Catherine Dubourdieu (HZB & FUBerlin, Germany)
Data e ora: 
Martedì, 3 Giugno, 2025 - 14:45
Aula: 
Sala Conferenze
Abstract: 

In recent years, new exotic polar textures featuring curled polarization patterns (vortices, skyrmions, etc…) have been unraveled in ferroelectric ultrathin films, superlattices or nanostructures. Understanding and controlling topological polar textures open up exciting possibilities for advanced applications in memories, logic devices or sensors. So far, all polar textures have been realized on oxide substrates (such as SrTiO3 or scandates), which limits their applicability. In this talk, I will present the stabilization of topological polar states in BaTiO3-based materials epitaxially grown on silicon. I will also briefly discuss our work on ferroelectric devices for neuromorphic computing applications.

(Background image taken from this URL, © Laura Canil/HZB)

 

Bio: 
Catherine Dubourdieu is a Full Professor (W3) at Free University in Berlin and the Head of the Institute “Functional Oxides for Energy-Efficient Information Technology” at the Helmholtz-Zentrum Berlin in Germany. She earned an Engineer diploma from Grenoble Institute of Technology in 1992 and a MSc and PhD degrees in Physics from J. Fourier University, Grenoble, in 1992 and 1995 respectively. After a postdoctoral fellowship at Stevens Institute of Technology, USA, she held a permanent position at the Centre National de la Recherche Scientifique, France (1997-2016). From May 2009 until May 2012, she was a Visiting Scientist at the T.J. Watson Research Center of IBM in Yorktown Heights (USA). In April 2016, she moved to HZB in Germany within the Helmholtz recruiting Initiative. She received an IBM Faculty Award in 2014 and was awarded an ERC Advanced Grant in 2023.

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